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| SLD301B Block-type 100mW High Power Laser Diode Description The SLD301B is a high power laser diode mounted on a 3 x 3 x 5mm Copper block. It is ideal for applications which require a minimal distance between the laser facet and external optical parts. Features * Compact size 3 x 3 x 5mm block * High power output Po = 100mW * Hole for thermistor Applications * Solid state laser excitation * Medical use Structure GaAlAs double hetero-type laser diode Absolute Maximum Ratings (Tc = 25C) * Optical power output * Recommended optical power output * Reverse voltage * Operating temperature * Storage temperature Pin Configuration No. 1 2 Function LD cathode LD anode 1 LD cathode Po 100 Po 90 VR LD 2 Topr -10 to +50 Tstg -40 to +85 mW mW V C C 2 LD anode Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. -1- E89103A81-PS SLD301B Electrical and Optical Characteristics Item Threshold current Operating current Operating voltage Wavelength Radiation angle Perpendicular to junction (F. W. H. M.) Parallel to junction Positional accuracy Position Angle Differential efficiency F. W. H. M. : Full Width at Half Maximum Symbol Ith Iop Vop p // X Y, Z D (Tc = 25C) Conditions Min. Typ. 150 PO = 90mW PO = 90mW PO = 90mW PO = 90mW 770 28 12 300 1.9 Max. 200 400 3.0 840 40 17 300 PO = 90mW 100 3 PO = 90mW 0.5 0.7 Unit mA mA V nm degree m degree mW/mA -2- SLD301B Example of Representative Characteristics Optical power output vs. Forward current 200 1000 Threshold current vs. Temperature characteristics PO - Optical power output [mW] Ith - Threshold current [mA] 500 Tc = 0C 100 Tc = 25C Tc = -10C Tc = 50C 100 -10 0 10 20 30 40 50 Tc - Case temperature [C] 0 0 250 IF - Forward current [mA] 500 Power dependence of far field pattern Tc = 25C Radiation intensity (optional scale) Radiation intensity (optional scale) (Parallel to junction) Power dependence of near field pattern Tc = 25C PO = 90mW PO = 60mW PO = 30mW PO = 90mW PO = 75mW PO = 50mW PO = 25mW -30 -20 -10 0 10 20 30 50m Angle [degree] Oscillation wavelength vs. Temperature characteristics 830 PO = 90mW p - Oscillation wavelength [nm] 820 Differential efficiency vs. Temperature characteristics 1.5 810 D - Differential efficiency [mW/mA] 0 10 20 30 40 50 Tc - Case temperature [C] 1.0 800 790 0.5 780 -10 0 -10 0 10 20 30 40 50 Tc - Case temperature [C] -3- SLD301B Power dependence of polarization ratio 40 Tc = 25C 2.5 30 3.0 Optical power output vs. Operating current Pulse width = 1s Duty = 10% Tc = 23C PULSE Po - Optical power output [W] Polarization ratio 2.0 20 1.5 1.0 CW 0.5 10 0 0 0 20 40 60 80 100 120 Po - Optical power output [mW] 0 0.5 1.0 1.5 2.0 2.5 Iop - Operating current [A] Pulse width dependence of COD power 10 5.0 Duty = 10% TC = 23C COD output [W] 1.0 0.5 CW 0.1 0.1 0.5 1.0 5.0 10 50 100 Pulse width [s] COD (Catastrophic Optical Damage) -4- SLD301B Power Dependence of Wavelength Tc = 25C Po = 20mW Reletive radiant intensity Reletive radiant intensity Tc = 25C Po = 40mW 800 805 Wavelength [nm] 810 800 805 Wavelength [nm] 810 Tc = 25C Po = 60mW Reletive radiant intensity Reletive radiant intensity Tc = 25C Po = 80mW 800 805 Wavelength [nm] 810 800 805 Wavelength [nm] 810 Tc = 25C Po = 100mW Reletive radiant intensity 800 805 Wavelength [nm] 810 -5- SLD301B Temperature Dependence of Wavelength (PO = 90mW) Tc = -6C Tc = 12C Reletive radiant intensity 805 815 Wavelength [nm] 825 Reletive radiant intensity 805 815 Wavelength [nm] 825 Tc = 23C Tc = 35C Reletive radiant intensity 805 815 Wavelength [nm] 825 Reletive radiant intensity 805 815 Wavelength [nm] 825 Tc = 45C Reletive radiant intensity 805 815 Wavelength [nm] 825 -6- SLD301B Package Outline Unit: mm M - 261 5.0 0.1 O1.5 for Thermistor 1.7 LD Chip 1.0 1.5 Ceramic Contact Plate (LD Cathode) Body (LD Anode) 0.2 3.0 0.1 1.8 SONY CODE EIAJ CODE JEDEC CODE M-261 PACKAGE WEIGHT 1g -7- 3.0 0.1 0.3 0.2 1.5 PACKAGE STRUCTURE |
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